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 Preliminary Datasheet
BCR8LM-14LD
Triac
Medium Power Use Features
IT (RMS) : 8 A VDRM : 700 V IFGTI , IRGTI, IRGTIII : 50 mA Viso : 1800 V The product guaranteed maximum junction temperature 150C. Insulated Type Planar Type UL Recognized : File No. E223904 R07DS0062EJ0100 Rev.1.00 Jul 27, 2010
Outline
RENESAS Package code: PRSS0003AF-A) (Package name: TO-220FL)
2 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal
3 1 1 23
Applications
Motor control, heater control
Maximum Ratings
Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 Symbol VDRM VDSM Voltage class 14 700 800 Unit V V
R07DS0062EJ0100 Rev.1.00 Jul 27, 2010
Page 1 of 7
BCR8LM-14LD
Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Isolation voltage Notes: 1. Gate open. Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Tstg -- Viso Ratings 8 48 9.5 5 0.5 10 2 - 40 to +150 - 40 to +150 1.5 1800 Unit A A A2s W W V A C C g V Conditions
Preliminary
Commercial frequency, sine full wave 360 conduction, Tc = 85C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current
Typical value Ta = 25C, AC 1 minute, T1*T2*G terminal to case
Electrical Characteristics
Parameter Repetitive peak off-state current On-state voltage Gate trigger voltageNote2 Symbol IDRM VTM VFGT VRGT VRGT IFGT IRGT IRGT VGD Rth (j-c) (dv/dt)c Min. -- -- -- -- -- -- -- -- 0.2 -- 10 Typ. -- -- -- -- -- -- -- -- -- -- -- Max. 2.0 2.0 1.5 1.5 1.5 50 50 50 -- 4.9 -- Unit mA V V V V mA mA mA V C/W V/s Test conditions Tj = 125C, VDRM applied Tc = 25C, ITM = 12 A, Instantaneous measurement Tj = 25C, VD = 6 V, RL = 6 , RG = 330 Tj = 25C, VD = 6 V, RL = 6 , RG = 330 Tj = 125C, VD = 1/2 VDRM Junction to caseNote3 Tj = 125C
Gate trigger currentNote2
Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state Note4 commutating voltage
Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C/W. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Commutating voltage and current waveforms (inductive load)
Supply Voltage
Time (di/dt)c Time Time VD
Test conditions 1. Junction temperature Tj = 125C 2. Rate of decay of on-state commutating current (di/dt)c = - 4 A/ms 3. Peak off-state voltage VD = 400 V
Main Current Main Voltage (dv/dt)c
R07DS0062EJ0100 Rev.1.00 Jul 27, 2010
Page 2 of 7
BCR8LM-14LD
Preliminary
Performance Curves
Maximum On-State Characteristics
102 7 5
Rated Surge On-State Current
60
On-State Current (A)
3 2 101 7 5 3 2 100 7 5 3 2 10-1
Surge On-State Current (A)
1.8 2.2 2.6 3.0 3.4 3.8
Tj = 25C
50 40 30 20 10 0 100
0.6
1.0
1.4
2
3
5 7 101
2
3
5 7 102
On-State Voltage (V)
Conduction Time (Cycles at 60 Hz)
Gate Trigger Current (Tj = tC) x 100 (%) Gate Trigger Current (Tj = 25C)
Gate Characteristics (I, II and III)
102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10-1 101
VGD = 0.2 V VGT = 1.5 V PG(AV) = 0.5 W VGM = 10 V PGM =5 W
Gate Trigger Current vs. Junction Temperature
103 7 5 3 2 102 7 5 3 2 101
-60 -40 -20 0 20 40 60 80 100 120 140 160
Typical Example
IRGTIII
Gate Voltage (V)
IGM = 2 A
IFGTI
IFGT I IRGT II IRGT III
IRGTI
23
5 7102
23
5 7 103
23
5 7 104
Gate Current (mA)
Junction Temperature (C)
Gate Trigger Voltage (Tj = tC) x 100 (%) Gate Trigger Voltage (Tj = 25C)
Gate Trigger Voltage vs. Junction Temperature
103 7 5 3 2 102 7 5 3 2 101
-60 -40 -20 0 20 40 60 80 100 120 140 160
Maximum Transient Thermal Impedance Characteristics (Junction to case)
Transient Thermal Impedance (C/W)
102 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 10-1 103 104
Typical Example
100
101
102
Junction Temperature (C)
Conduction Time (Cycles at 60 Hz)
R07DS0062EJ0100 Rev.1.00 Jul 27, 2010
Page 3 of 7
BCR8LM-14LD
Maximum Transient Thermal Impedance Characteristics (Junction to ambient)
Transient Thermal Impedance (C/W)
103
Preliminary
Maximum On-State Power Dissipation
16
No Fins
On-State Power Dissipation (W)
7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2
14
360 Conduction Resistive, 10 inductive loads
12 8 6 4 2 0 0 2 4 6 8 10
10-1 101 2 3 5 7102 2 3 5 7103 2 3 5 7104 2 3 5 7105
Conduction Time (Cycles at 60 Hz)
RMS On-State Current (A)
Allowable Case Temperature vs. RMS On-State Current
160 140
Allowable Ambient Temperature vs. RMS On-State Current
160
Ambient Temperature (C)
Curves apply regardless of conduction angle
140 120 100 80 60 40 20 0 0 2 4
All fins are black painted aluminum and greased
Case Temperature (C)
120 100 80 60 40
120 x 120 x t2.3 100 x 100 x t2.3 60 x 60 x t2.3
360 Conduction 20 Resistive, inductive loads 0 0 2 4 6 8
Curves apply regardless of conduction angle Resistive, inductive loads Natural convection
6 8 10 12 14 16
10
12
14
16
RMS On-State Current (A)
RMS On-State Current (A)
Repetitive Peak Off-State Current (Tj = tC) x 100 (%) Repetitive Peak Off-State Current (Tj = 25C)
Allowable Ambient Temperature vs. RMS On-State Current
160
Natural convection No Fins Curves apply regardless of conduction angle Resistive, inductive loads
Repetitive Peak Off-State Current vs. Junction Temperature
106 7 5 3 2 105 7 5 3 2 104 7 5 3 2 103 7 5 3 2 102 -60 -40 -20
Typical Example
Ambient Temperature (C)
140 120 100 80 60 40 20 0 0.0 0.5
1.0
1.5
2.0
2.5
3.0
0
20 40 60 80 100 120 140 160
RMS On-State Current (A)
Junction Temperature (C)
R07DS0062EJ0100 Rev.1.00 Jul 27, 2010
Page 4 of 7
BCR8LM-14LD
Holding Current vs. Junction Temperature
Holding Current (Tj = tC) x 100 (%) Holding Current (Tj = 25C)
103 7 5 3 2 102 7 5 3 2 101
-60 -40 -20 0 20 40 60 80 100 120 140 160
Preliminary
Latching Current vs. Junction Temperature
103 7 5
Typical Example
Distribution
Latching Current (mA)
3 2 102 7 5 3 2 101 7 5 3 2
T2+, G- Typical Example
T2+, G+ Typical Example T2-, G-
0 20 40 60 80 100 120 140 160
100 -60 -40 -20
Junction Temperature (C)
Junction Temperature (C)
160
Breakover Voltage (dv/dt = x V/ms) x 100 (%) Breakover Voltage (dv/dt = 1 V/ms)
Breakover Voltage vs. Junction Temperature
Breakover Voltage (Tj = tC) x 100 (%) Breakover Voltage (Tj = 25C)
Typical Example
140 120 100 80 60 40 20 0
-60 -40 -20 0 20 40 60 80 100 120 140 160
Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj = 125C)
160 140 120
Typical Example Tj = 125C III Quadrant
100 80 60
I Quadrant
40 20 0 101 2 3 5 7102 2 3 5 7103 2 3 5 7104
Junction Temperature (C)
Rate of Rise of Off-State Voltage (V/s)
Breakover Voltage (dv/dt = x V/ms) x 100 (%) Breakover Voltage (dv/dt = 1 V/ms)
Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj = 150C)
160 140 120 100 80 60 40 20
Commutation Characteristics (Tj = 125C)
Critical Rate of Rise of Off-State Commutating Voltage (V/s)
7 5 3 2 101 7 5 3
Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT Time
Typical Example Tj = 150C
III Quadrant
Minimum Characteristics Value I Quadrant III Quadrant
I Quadrant
0
101 2 3 5 7102 2 3 5 7103 2 3 5 7 104
Typical Example = 125C 2 Tj = 4 A IT = 500 s 100 VD = 200 V f = 3 Hz
7 100
2
3
5 7 101
2
3
5 7 102
Rate of Rise of Off-State Voltage (V/s)
Rate of Decay of On-State Commutating Current (A/ms)
R07DS0062EJ0100 Rev.1.00 Jul 27, 2010
Page 5 of 7
BCR8LM-14LD
Preliminary
Gate Trigger Current vs. Gate Current Pulse Width
Gate Trigger Current (tw) x 100 (%) Gate Trigger Current (DC)
103 7 5 3 2 102 7 5 3 2 101 100
Typical Example
IRGTIII IRGTI IFGTI
Commutation Characteristics (Tj = 150C)
Critical Rate of Rise of Off-State Commutating Voltage (V/s)
7 5 3 2 101 7 5
III Quadrant I Quadrant
Typical Example 3 Tj = 150C Main Voltage I =4A (dv/dt)c 2T = 500 s Main Current IT VD = 200 V 100 f = 3 Hz 7 100 2 3 5 7 101 23
Time VD (di/dt)c Time
5 7 102
2
3
5 7 101
2
3
5 7 102
Rate of Decay of On-State Commutating Current (A/ms)
Gate Current Pulse Width (s)
Gate Trigger Characteristics Test Circuits
6 6
6V V
A 330
6V V
A 330
Test Procedure I 6
Test Procedure II
6V V
A 330
Test Procedure III
R07DS0062EJ0100 Rev.1.00 Jul 27, 2010
Page 6 of 7
BCR8LM-14LD
Preliminary
Package Dimensions
Package Name TO-220FL JEITA Package Code RENESAS Code PRSS0003AF-A Previous Code TO-220FL MASS[Typ.] 1.5g
Unit: mm
10.0 0.3
2.8 0.2
3.0 0.3
15.0 0.3
3.2 0.2
3.6 0.3
12.5 0.5
1.15 0.2 1.15 0.2
0.75 0.15 0.40 0.15 2.54 0.25 2.54 0.25
6.5 0.3 2.6 0.2 4.5 0.2
Order Code
Lead form Straight type Lead form Standard packing Plastic Magazine (Tube) Plastic Magazine (Tube) Quantity 50 50 Standard order code Type name Type name - Lead forming code Standard order code example BCR8LM-14LD BCR8LM-14LD-A8
Note : Please confirm the specification about the shipping in detail.
R07DS0062EJ0100 Rev.1.00 Jul 27, 2010
Page 7 of 7
Notice
1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website. 2. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. 3. 4. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 5. When exporting the products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. 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